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Title: Strain effects on in-plane conductance of the topological insulator Bi{sub 2}Te{sub 3}

We investigated the correlation between electrical transport and mechanical stress in a topological insulator, Bi{sub 2}Te{sub 3}, using conductive probe atomic force microscopy in an ultrahigh vacuum environment. After directly measuring charge transport on the cleaved Bi{sub 2}Te{sub 3} surface, we found that the current density varied with applied load. Current mapping revealed a variation of the current on different terraces. The current density increased in the low-pressure regime and then decreased in the high-pressure regime. This variation of current density was explained in light of the combined effect of changes in the in-plane conductance due to spin–orbit coupling and hexagonal warping.
Authors:
; ; ;  [1] ;  [2] ; ;  [3] ;  [4] ;  [5]
  1. Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon 305-701 (Korea, Republic of)
  2. (KAIST), Daejeon 305-701 (Korea, Republic of)
  3. Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)
  4. Department of Physics, KAIST, Daejeon 305-701 (Korea, Republic of)
  5. Korea Research Institute of Standards and Science, 267 Gajeong-ro, Yuseong-gu, Daejeon 305-340 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22262532
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; BISMUTH TELLURIDES; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRICAL INSULATORS; STRAINS; STRESSES; SURFACES; TOPOLOGY