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Title: Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ∼10{sup 3} Ωcm for un-implanted samples to ∼10{sup −2} Ωcm for as-implanted ones are observed. The resistivity is further decreased to ∼10{sup −3} Ωcm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.
Authors:
; ; ;  [1] ;  [2]
  1. College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan)
  2. Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)
Publication Date:
OSTI Identifier:
22261964
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ANNEALING; ENERGY LEVELS; GERMANIUM IONS; HALL EFFECT; MONOCRYSTALS; PEAKS; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; ZINC OXIDES