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Title: Built-in electric field and radiative efficiency of polar (0001) and semipolar (11–22) Al{sub 0.5}Ga{sub 0.5}N/GaN quantum dots

We compare the optical properties of ensembles of polar (0001) and semipolar (11–22) Al{sub 0.5}Ga{sub 0.5}N/GaN quantum dots grown by molecular beam epitaxy The polar quantum dot emission shows a huge Stark shift. Using dot height distributions measured by transmission electron microscopy, a simple model allows accounting for the PL energies and lineshapes, and to the screening of the Stark field. The semipolar quantum dots emission show a much weaker Stark effect. High room temperature quantum yields attest the efficiency of 3D-confinement.
Authors:
; ; ; ; ; ; ;  [1] ;  [2]
  1. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS, Rue B.Grégory 06560 Valbonne (France)
  2. (Tunisia)
Publication Date:
OSTI Identifier:
22261947
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EFFICIENCY; ELECTRIC FIELDS; EMISSION; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; QUANTUM DOTS; STARK EFFECT; TRANSMISSION ELECTRON MICROSCOPY