skip to main content

SciTech ConnectSciTech Connect

Title: Ab initio studies of early stages of AlN and GaN growth on 4H-SiC

Processes of aluminum and gallium adsorption on Si- and C-terminated 4H-SiC(0001) surfaces have been studied within the DFT framework. Al and Ga coverages ranging from a submonolayer to one monolayer have been considered. The results show that Al binds more strongly to both surfaces than Ga and the binding of both metals is stronger to the C-terminated than to Si-terminated surface of SiC. The lateral lattice sites occupied by Al and Ga atoms at one monolayer are different and it is due to a different charge transfer from metal to the substrate.
Authors:
;  [1] ;  [2] ;  [3]
  1. Institute of Experimental Physics, University of Wroclaw, PL-50-204 Wroclaw (Poland)
  2. Institute of Physics, University of Rzeszow, PL -35-959 Rzeszow, Poland and Faculty of Physics, University of Warsaw, PL-00-681 Warsaw (Poland)
  3. Faculty of Physics, University of Warsaw, PL-00-681 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22261940
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ADSORPTION; ALUMINIUM; ALUMINIUM NITRIDES; GALLIUM; GALLIUM NITRIDES; SILICON CARBIDES; SUBSTRATES; SURFACES