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Title: Fourier spectroscopy of individual nitrogen impurity centers in GaAs

We report on the measurement of the exciton homogeneous linewidth in nitrogen impurity centers in GaAs:N. Fourier spectroscopy on a single center revealed a long coherence time over 300 ps at low temperature. The narrowest linewidth obtained at liquid helium temperature is 3.5 μeV, which is comparable with that of semiconductor quantum dots. The linewidth increases with increasing temperature, showing a thermally activated behavior with activation energies of 2∼5 meV.
Authors:
 [1] ; ; ;  [2] ; ;  [3]
  1. PRESTO-JST, JST, Kawaguchi, Japan and Institute of Physics, University of Tsukuba, Tsukuba (Japan)
  2. Institute of Physics, University of Tsukuba, Tsukuba (Japan)
  3. National Institute for Materials Science, Tsukuba (Japan)
Publication Date:
OSTI Identifier:
22261933
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM ARSENIDES; HELIUM; LIQUIDS; NITROGEN; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY