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Title: Properties of InGaAlAs/AlGaAs quantum dots for single photon emission in the near infrared and visible spectral range

We have carried out a detailed characterization of individual self-assembled InGaAlAs/AlGaAs quantum dots grown on GaAs substrate and emitting in the 680–780 nm spectral range. Exciton, biexciton and charged exciton emission lines originating from the same quantum dot have been identified, and the biexciton and charged exciton binding energies have been derived to be equal ∼ 5 and ∼ 9 meV, respectively. The second-order photon correlation experiments allowed us to show a clear antibunching for exciton emission with a value of g{sup (2)}(0) = 0.04±0.02, confirming distinctly that such GaAs-based quantum dots can be considered as single photon quantum emitters in the abovementioned wavelength range.
Authors:
; ; ;  [1] ; ; ;  [2] ; ; ; ; ;  [3]
  1. Institute of Physics, Wrocław University of Technology, 50-370 Wrocław (Poland)
  2. Institute of Experimental Physics, Faculty of Physics, University of Warsaw, 00-681 Warsaw (Poland)
  3. Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)
Publication Date:
OSTI Identifier:
22261931
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; BINDING ENERGY; GALLIUM ARSENIDES; PHOTON EMISSION; QUANTUM DOTS; SUBSTRATES