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Title: Valley and electric photocurrents in 2D silicon and graphene

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4848515· OSTI ID:22261923
;  [1]; ;  [2]
  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)
  2. Terahertz Center, University of Regensburg, 93040 Regensburg (Germany)

We show that the optical excitation of multi-valley systems leads to valley currents which depend on the light polarization. The net electric current, determined by the vector sum of single-valley contributions, vanishes for some peculiar distributions of carriers in the valley and momentum spaces forming a pure valley current. We report on the study of this phenomenon, both experimental and theoretical, for graphene and 2D electron channels on the silicon surface.

OSTI ID:
22261923
Journal Information:
AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English