skip to main content

Title: Photoreflectance and photoluminescence study of InAs dots-in-a-well nanostructures

InAs quantum dots (QDs), embedded within InGaAs/GaAs/AlAs and GaAs/AlAs quantum wells (QWs), are examined by photoreflectance and photoluminescence techniques. Optical properties and electronic structure of two differently designed dots-in-a-well nanostructures is revealed focusing on the effect of strain-reducing InGaAs layer, which is discussed in detail. It is found that the use of InGaAs capping layer red-shifts the QD ground-state interband transition energy by about 100 meV maintaining strong quantization of the electronic states. The changes in InAs QD electronic properties are ascribed mainly to QD size/shape variation due to decomposition of InGaAs layer during growth process.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius (Lithuania)
  2. School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom)
Publication Date:
OSTI Identifier:
22261914
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; DECOMPOSITION; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; GROUND STATES; INDIUM ARSENIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS; QUANTUM WELLS