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Title: Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy Δ{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which Δ{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom)
  2. 1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia)
  3. Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States)
  4. Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)
Publication Date:
OSTI Identifier:
22261910
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONCENTRATION RATIO; GALLIUM ARSENIDES; INHIBITION; SPIN