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Title: Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells

Time dynamics of photoluminescence intensity was studied in InGaAsSb/AlGaAsSb quantum wells with different compositions of the barrier solid solution and with different width of the quantum wells. The time of charge carrier capture in quantum wells, the energy relaxation times, lifetime related to resonant Auger recombination were estimated.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. St. Petersburg State Polytechnical University, 195251, Polytechnicheskaya str. 29, St. Petersburg (Russian Federation)
  2. Department of Electrical and Computer Engineering, State University of New York at Stony Brook, New York 11794 (United States)
Publication Date:
OSTI Identifier:
22261907
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; PHOTOLUMINESCENCE; QUANTUM WELLS; SOLID SOLUTIONS