skip to main content

Title: Intrinsic optical confinement for ultrathin InAsN quantum well superlattices

We study energy-band engineering with InAsN monolayer in GaAs/GaP quantum well structure. A tight-binding calculation indicates that both type I alignment along with direct band-gap behavior can be obtained. We show that the optical transitions are less sensitive to the position of the probe.
Authors:
; ; ; ; ; ;  [1]
  1. Universit√© Europeenne de Bretagne, INSA Rennes,France and CNRS, UMR 6082, Foton, 20 avenues des Buttes de Co√ęsmes, 35708 Rennes (France)
Publication Date:
OSTI Identifier:
22261901
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; QUANTUM WELLS; SUPERLATTICES