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Title: GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.
Authors:
; ; ; ; ;  [1]
  1. Semiconductor Device Research Laboratory (Nanotec Center of Excellence) Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330 (Thailand)
Publication Date:
OSTI Identifier:
22261898
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SOLIDS; SUBSTRATES