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Title: Optical and structural properties of In{sub 0.64}Ga{sub 0.36}As/Al{sub x}Ga{sub 1−x}As(x≤0.2)/AlAsSb coupled double quantum wells

We have studied optical and structural properties of In{sub 0.64}Ga{sub 0.36}As/Al{sub x}Ga{sub 1−x}As(x≤0.2)/AlAsSb coupled double quantum wells (CDQWs) for controlling the interband transition energy of CDQWs as well as changing the residual strain of CDQWs. By changing Al composition of Al{sub x}Ga{sub 1−x}As center barrier, the interband transition energy was successfully controlled due to changing coupling strength between the double quantum wells. Comparing with our previous study, In composition of InGaAs wells was reduced and consequently, residual strain of the CDQWs was also changed.
Authors:
; ;  [1]
  1. National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, 205-8568 (Japan)
Publication Date:
OSTI Identifier:
22261897
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ENERGY-LEVEL TRANSITIONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM WELLS; X-RAY SPECTROSCOPY