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Title: Emission of terahertz radiation from GaN/AlGaN heterostructure under electron heating in lateral electric field

Spontaneous emission of terahertz radiation from modulation-doped AlGaN/GaN heterostructure under conditions of heating of a two-dimensional electron gas in the lateral electric field has been studied. The experimental data on the field dependence of the integral intensity of THz emission is compared with the theoretical simulation of blackbody-like emission from hot 2D electrons. Complementary transport measurements have been carried out to determine the dependence of effective electron temperature on electric field.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. St. Petersburg State Polytechnic University, 195251 St. Petersburg (Russian Federation)
  2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)
Publication Date:
OSTI Identifier:
22261896
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRON GAS; ELECTRON TEMPERATURE; ELECTRONS; EMISSION; GALLIUM NITRIDES; SIMULATION