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Title: Fast luminescence decay of electron-hole quasi-two dimensional systems in Si nanolayer

We have studied the photoluminescence (PL) spectra and PL decay profiles of electron-hole systems in high quality Si nanolayers. We have found that the PL lifetime decreases with decrease in the thickness of silicon nanolayers between 25.2 and 2.7 nm and with decrease in temperature between 5 and 70 K.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai, Tsukuba, Ibaraki, 305-8577 (Japan)
  2. Institute for chemical research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011 (Japan)
Publication Date:
OSTI Identifier:
22261894
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DECAY; PHOTOLUMINESCENCE; SILICON; SPECTRA; THICKNESS; TWO-DIMENSIONAL CALCULATIONS