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Title: Fast luminescence decay of electron-hole quasi-two dimensional systems in Si nanolayer

Abstract

We have studied the photoluminescence (PL) spectra and PL decay profiles of electron-hole systems in high quality Si nanolayers. We have found that the PL lifetime decreases with decrease in the thickness of silicon nanolayers between 25.2 and 2.7 nm and with decrease in temperature between 5 and 70 K.

Authors:
; ; ; ;  [1]; ;  [2]
  1. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai, Tsukuba, Ibaraki, 305-8577 (Japan)
  2. Institute for chemical research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011 (Japan)
Publication Date:
OSTI Identifier:
22261894
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DECAY; PHOTOLUMINESCENCE; SILICON; SPECTRA; THICKNESS; TWO-DIMENSIONAL CALCULATIONS

Citation Formats

Sakurai, Y., Ohmori, K., Yamada, K., Shiraishi, K., Nomura, S., Tayagaki, T., and Kanemitsu, Y. Fast luminescence decay of electron-hole quasi-two dimensional systems in Si nanolayer. United States: N. p., 2013. Web. doi:10.1063/1.4848477.
Sakurai, Y., Ohmori, K., Yamada, K., Shiraishi, K., Nomura, S., Tayagaki, T., & Kanemitsu, Y. Fast luminescence decay of electron-hole quasi-two dimensional systems in Si nanolayer. United States. https://doi.org/10.1063/1.4848477
Sakurai, Y., Ohmori, K., Yamada, K., Shiraishi, K., Nomura, S., Tayagaki, T., and Kanemitsu, Y. 2013. "Fast luminescence decay of electron-hole quasi-two dimensional systems in Si nanolayer". United States. https://doi.org/10.1063/1.4848477.
@article{osti_22261894,
title = {Fast luminescence decay of electron-hole quasi-two dimensional systems in Si nanolayer},
author = {Sakurai, Y. and Ohmori, K. and Yamada, K. and Shiraishi, K. and Nomura, S. and Tayagaki, T. and Kanemitsu, Y.},
abstractNote = {We have studied the photoluminescence (PL) spectra and PL decay profiles of electron-hole systems in high quality Si nanolayers. We have found that the PL lifetime decreases with decrease in the thickness of silicon nanolayers between 25.2 and 2.7 nm and with decrease in temperature between 5 and 70 K.},
doi = {10.1063/1.4848477},
url = {https://www.osti.gov/biblio/22261894}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1566,
place = {United States},
year = {Wed Dec 04 00:00:00 EST 2013},
month = {Wed Dec 04 00:00:00 EST 2013}
}