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Title: Mid infrared optical properties of Ge/Si quantum dots with different doping level

Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. St. Petersburg State Polytechnic University, Polytechnicheskaya str. 29, St. Petersburg (Russian Federation)
  2. Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany)
  3. University of Regensburg, Regensburg (Germany)
Publication Date:
OSTI Identifier:
22261892
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTRA; ABSORPTION SPECTROSCOPY; CHARGE CARRIERS; DOPED MATERIALS; ENERGY SPECTRA; EQUILIBRIUM; OPTICAL PROPERTIES; POLARIZATION; QUANTUM DOTS