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Title: Optical anisotropy in [0001] oriented GaN/Al{sub x}Ga{sub 1−x}N quantum wells under pressure

We investigate the influence of external pressure on optical anisotropy of GaN/Al{sub x}Ga{sub 1−x}N quantum wells (QWs) grown along the c-crystallographic direction. Our theoretical study reveals that for sufficiently narrow GaN/Al{sub x}Ga{sub 1−x}N QWs, lattice matched to GaN substrate a pressure-dependent switching of polarization of emitted light occurs. This switching of polarization is manifested by the change of sign of the degree of polarization of photoluminescence spectra. We note that the results of our model critically depend on the deformation potential values and therefore can be used for verification of existing literature values of these parameters.
Authors:
 [1] ;  [2]
  1. Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warszawa (Poland)
  2. Institute of High Pressure Physics, Unipress, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warszawa (Poland)
Publication Date:
OSTI Identifier:
22261889
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANISOTROPY; CRYSTALLOGRAPHY; DEFORMATION; GALLIUM NITRIDES; PHOTOLUMINESCENCE; POLARIZATION; PRESSURE DEPENDENCE; QUANTUM WELLS; SPECTRA; SUBSTRATES