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Title: High quality GaAs single photon emitters on Si substrate

We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperatures on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly proved by antibunching in the second order correlation function as measured with a H anbury Brown and Twiss interferometer.
Authors:
;  [1] ; ; ;  [2] ; ;  [3] ;  [4] ;  [5] ;  [6]
  1. Dipartimento di Scienza dei Materiali and L-NESS, Università, di Milano Bicocca, Via Cozzi 53,I-20125 Milano (Italy)
  2. Dipartimento di Fisica e Astronomia, LENS and CNISM, Università, di Firenze, Via Sansone 1, I-50019 Firenze (Italy)
  3. Dipartimento di Fisica e Astronomia, LENS and CNISM, Universita di Firenze, Via Sansone 1, I-50019 Firenze (Italy)
  4. Dipartimento di Fisica and L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy)
  5. CNR-IMEM Institute, Parco Area delle Scienze 31/A, 43100 Parma (Italy)
  6. Dipartimento di Fisica e Astronomia, LENS and CNISM, Universita, di Firenze, Via Sansone 1, I-50019 Firenze (Italy)
Publication Date:
OSTI Identifier:
22261887
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; DROPLETS; EPITAXY; GALLIUM ARSENIDES; LIQUIDS; NITROGEN; PHOTONS; QUANTUM DOTS; SUBSTRATES