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Title: High excitation power photoluminescence studies of ultra-low density GaAs quantum dots

We fabricate GaAs epitaxial quantum dots (QDs) by filling of self-organized nanoholes in AlGaAs. The QDs are fabricated under optimized process conditions and have ultra-low density in the 10{sup 6} cm{sup −2} regime. At low excitation power the optical emission of single QDs exhibit sharp excitonic lines, which are attributed to the recombination of excitonic and biexcitonic states. High excitation power measurements reveal surprisingly broad emission lines from at least six QD shell states.
Authors:
; ; ; ;  [1]
  1. Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)
Publication Date:
OSTI Identifier:
22261886
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; DENSITY; EPITAXY; EXCITATION; GALLIUM ARSENIDES; PHOTOLUMINESCENCE; QUANTUM DOTS