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Title: Near infrared frequency dependence of high-order sideband generation

The near infrared frequency dependence of high order sideband generation in InGaAs quantum wells is discussed. The NIR frequency dependence of the sidebands indicates that the HSG phenomenon is excitonic in nature.
Authors:
; ;  [1] ;  [2]
  1. Physics Department and the Institute for Terahertz Science and Technology, University of California at Santa Barbara, Santa Barbara, CA 93106 (United States)
  2. Physics Department and Centre of Optical Sciences, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong (China)
Publication Date:
OSTI Identifier:
22261885
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; FREQUENCY DEPENDENCE; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM WELLS