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Title: Observation of localized states in atomically thin MoS{sub 2} field effect transistor

We present electrical transport and low frequency (1/f) noise measurements on mechanically exfoliated single, bi and trilayer MoS{sub 2}-based FET devices on Si/SiO{sub 2} substrate. We find that the electronic states in MoS{sub 2} are localized at low temperatures (T) and conduction happens through variable range hopping (VRH). A steep increase of 1/f noise with decreasing T, typical for localized regime was observed in all of our devices. From gate voltage dependence of noise, we find that the noise power is inversely proportional to square of the number density (∝ 1/n{sup 2}) for a wide range of T, indicating number density fluctuations to be the dominant source of 1/f noise in these MoS{sub 2} FETs.
Authors:
; ;  [1]
  1. Department of Physics, Indian Institute of Science, Bangalore 560 012 (India)
Publication Date:
OSTI Identifier:
22261876
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DENSITY; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; FLUCTUATIONS; MOLYBDENUM SULFIDES; NOISE; SILICA; SILICON OXIDES; SUBSTRATES