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Title: Kinetics of band bending and electron affinity at GaAs(001) surface with nonequilibrium cesium overlayers

The dosage dependences of surface band bending and effective electron affinity under cesium deposition on the Ga-rich GaAs(001) surface, along with the relaxation of these electronic properties after switching off the Cs source are experimentally studied by means of modified photoreflectance spectroscopy and photoemission quantum yield spectroscopy. At small Cs coverages, below half of a monolayer, additional features in the dosage dependence and subsequent downward relaxation of the photoemission current are determined by the variations of band bending. At coverages above half of a monolayer the upward relaxation of the photocurrent is caused supposedly by the decrease of the electron affinity due to restructuring in the nonequilibrium cesium overlayer.
Authors:
; ; ;  [1] ; ;  [2]
  1. Rzhanov Institute of Semiconductor Physics, Lavrentieva, 13, 630090 Novosibirsk, Russia and Novosibirsk State University, Pirogova, 2, 630090 Novosibirsk (Russian Federation)
  2. Rzhanov Institute of Semiconductor Physics, Lavrentieva, 13, 630090 Novosibirsk (Russian Federation)
Publication Date:
OSTI Identifier:
22261874
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AFFINITY; BENDING; CESIUM; DEPOSITION; GALLIUM ARSENIDES; LAYERS; PHOTOEMISSION; RELAXATION; SPECTROSCOPY; SURFACES