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Title: Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors

In this paper, we present a physics based analytical model for the calculation of surface barrier height for given values of barrier layer thicknesses and Al mole fractions. An explicit expression for the two dimensional electron gas density is also developed incorporating the change in polarization charges for different Al mole fractions.
Authors:
;  [1] ;  [2]
  1. Norwegian University of Science and Technology, Trondheim (Norway)
  2. Universitat Rovira i Virgili, Tarragona (Spain)
Publication Date:
OSTI Identifier:
22261872
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DENSITY; ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; POLARIZATION; THICKNESS