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Title: The electronic structure of an S-pair in barrier-less metal/silicon junctions

With S atoms doping into a bulk Si, it is revealed through first principles calculations that the highly S concentrated bulk Si is metallic. S atoms can be highly doped in the bulk Si because an S-pair located face to face in adjacent Si lattice sites gains a large energy and forms sp{sup 2} + p{sub z} electronic configurations and extra donor electrons. Schottky junction will be thus barrier-less by the Si metallization, well agreeing with experimental analyses.
Authors:
; ; ;  [1]
  1. Advanced LSI Technology Laboratory, Toshiba Corporate R and D Center (Japan)
Publication Date:
OSTI Identifier:
22261871
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; METALS; SEMICONDUCTOR JUNCTIONS; SILICON