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Title: Stabilization of temperature dependence of band Gap by introducing nitrogen ion into GaInNP alloy

The photoluminescence (PL) spectra of GaInNP are observed to survey the origin of the unique behavior of the band gap caused by incorporating nitrogen ions. The temperature dependence of the PL peak position is carefully analyzed. It is found that the reduction of the temperature alteration owing to the nitrogen incorporation arises from the hybridization between the nitrogen local 3s and 3p orbitals and the conduction band. In the GaInNP and host GaInP with the indium content around 50%, which has a direct band gap slightly lower than an X-valley, the band gap shrinkage with temperature is mediated by an LA phonon at X point.
Authors:
; ;  [1]
  1. The Institute of Scientific and Industrial Research, Osaka Univ., Mihogaoka 8-1, Ibaraki, Osaka 567-0047 (Japan)
Publication Date:
OSTI Identifier:
22261869
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOYS; HYBRIDIZATION; INDIUM; NITROGEN; NITROGEN IONS; PHOTOLUMINESCENCE; SHRINKAGE; SPECTRA; STABILIZATION; TEMPERATURE DEPENDENCE