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Title: Effects of atomic disorder on impact ionization rate in silicon nanodots

We theoretically investigate effects of atomic disorder existing near the Si/SiO{sub 2} interfaces on the impact ionization rate of a Si nanodot (SiND). We find that the impact ionization rate of a disordered SiND becomes higher near the threshold energy and approaches that of an ideal SiND for higher energy region.
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan and CREST, JST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)
  2. Faculty of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555 (Japan)
  3. Faculty of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan and CREST, JST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)
  4. Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan)
Publication Date:
OSTI Identifier:
22261868
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; INTERFACES; IONIZATION; QUANTUM DOTS; SILICA; SILICON; SILICON OXIDES; THRESHOLD ENERGY