skip to main content

SciTech ConnectSciTech Connect

Title: Theoretical study of energy states of two-dimensional electron gas in pseudomorphically strained InAs HEMTs taking into account the non-parabolicity of the conduction band

We determined rigorously the energy states of a two-dimensional electron gas (2DEG) in high electron mobility transistors (HEMTs) with a pseudomorphically strained InAs channel (InAs PHEMTs) taking into account the non-parabolicity of the conduction band for InAs. The sheet carrier concentration of 2DEG for the non-parabolic energy band was about 50% larger than that for the parabolic energy band and most of the electrons are confined strongly in the InAs layer. In addition, the threshold voltage for InAs PHEMTs was about 0.21 V lower than that for conventional InGaAs HEMTs.
Authors:
; ; ; ; ; ;  [1]
  1. Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science 2641 Yamazaki, Noda, Chiba Pref., 278-8510 (Japan)
Publication Date:
OSTI Identifier:
22261866
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM ARSENIDES; INDIUM ARSENIDES