Photoconductivity of graphene devices induced by terahertz radiation at various photon energies
Journal Article
·
· AIP Conference Proceedings
- NTH School for Contacts in Nanosystems, Germany and Institut fuer Angewandte Physik, Technische Universitaet Braunschweig, D-38106 Braunschweig (Germany)
- Institut fuer Angewandte Physik, Technische Universitaet Braunschweig, D-38106 Braunschweig (Germany)
- Physikalisch Technische Bundesanstalt (PTB), Bundesallee 100, D-38116 Braunschweig (Germany)
- NTH School for Contacts in Nanosystems, Germany and Institut fuer Festkoerperphysik, Universitaet Hannover, D-30167 Hannover (Germany)
The influence of a magnetic field on Landau levels (LLs) in graphene-based devices is described via the magneto-optical response induced by terahertz (THz) radiation. For single-layer graphene, the resonance energies of the transitions between the on Landau levels (LLs) such as L{sub 1}, L{sub 2} and L{sub 3} fit quite well to the terahertz spectral range at low magnetic fields. Also, the calculations for the terahertz photoresponse (photoconductivity) in the presence of low magnetic fields, the reported calculations for the scattering rate of LLs, recent and our experimental results of photoresponse measurements yield that single-layer graphene is suitable for the detection of terahertz radiation.
- OSTI ID:
- 22261865
- Journal Information:
- AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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