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Title: Observation of negative differential capacitance (NDC) in Ti Schottky diodes on SiGe islands

The Negative Differential Capacitance (NDC) effect on Ti Schottky diodes formed on n-type Silicon samples with embedded Germanium Quantum Dots (QDs) is observed and reported. The NDC-effect is detected using capacitance-voltage (CV) method at temperatures below 200 K. It is explained by the capture of electrons in Germanium QDs. Our measurements reveal that each Ge QD captures in average eight electrons.
Authors:
;  [1] ; ; ;  [2]
  1. Institute of Semiconductor and Solid State Physics, Johannes Kepler Universit├Ąt, A-4040 Linz (Austria)
  2. Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Germany)
Publication Date:
OSTI Identifier:
22261864
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRONS; GERMANIUM SILICIDES; QUANTUM DOTS; SCHOTTKY BARRIER DIODES; SILICON