skip to main content

Title: Electronic spectrum of a deterministic single-donor device in silicon

We report the fabrication of a single-electron transistor (SET) based on an individual phosphorus dopant that is deterministically positioned between the dopant-based electrodes of a transport device in silicon. Electronic characterization at mK-temperatures reveals a charging energy that is very similar to the value expected for isolated P donors in a bulk Si environment. Furthermore, we find indications for bulk-like one-electron excited states in the co-tunneling spectrum of the device, in sharp contrast to previous reports on transport through single dopants.
Authors:
; ; ;  [1] ;  [2]
  1. Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, NSW 2052 (Australia)
  2. Centre for Quantum Computation and Communication Technology, University of Melbourne, VIC 3010 (Australia)
Publication Date:
OSTI Identifier:
22261863
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRONS; EQUIPMENT; EXCITED STATES; PHOSPHORUS; SILICON; SPECTRA; TUNNEL EFFECT