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Title: Tailoring the spin polarization in Ge/SiGe multiple quantum wells

We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.
Authors:
; ; ; ;  [1] ; ; ; ;  [2] ; ;  [3] ;  [4] ;  [5]
  1. LNESS-Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, I-20125 Milano (Italy)
  2. LNESS-Dipartimento di Fisica, Politecnico di Milano, I-20133 Milano (Italy)
  3. Department of Physics and Astronomy, University of Rochester, Rochester (United States)
  4. Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)
  5. Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 and Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)
Publication Date:
OSTI Identifier:
22261861
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOLARIZATION; GERMANIUM SILICIDES; PHOTOLUMINESCENCE; POLARIZATION; POWER DENSITY; QUANTUM WELLS; SPIN; SPIN ORIENTATION