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Title: g-factor anisotropy in nanowire-based InAs quantum dots

The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between |g*| = 5 and 15.
Authors:
; ; ;  [1] ;  [2]
  1. Departement of Physics, University of Basel, Klingelbergstr. 82, CH-4056 Basel (Switzerland)
  2. Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)
Publication Date:
OSTI Identifier:
22261856
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; CONTROL; INDIUM ARSENIDES; LANDE FACTOR; MAGNETIC FIELDS; QUANTUM COMPUTERS; QUANTUM DOTS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SPIN; STACKING FAULTS