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Title: Band-structure analysis from photoreflectance spectroscopy in (Ga,Mn)As

Modulation photoreflectance spectroscopy has been applied to study the band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn content. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy in the (Ga,Mn)As layers with increasing Mn content are interpreted in terms of a disordered valence band, extended within the band gap, formed, in highly Mn-doped (Ga,Mn)As, as a result of merging the Mn-related impurity band with the host GaAs valence band.
Authors:
; ;  [1] ; ; ;  [2] ;  [3]
  1. Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin (Poland)
  2. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)
  3. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland and MAX-Lab, Lund University, 22100 Lund (Sweden)
Publication Date:
OSTI Identifier:
22261849
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; EPITAXY; GALLIUM ARSENIDES; IMPURITIES; MAGNETIC PROPERTIES; SPECTROSCOPY; SQUID DEVICES; X-RAY DIFFRACTION