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Title: Structural analysis of Cr aggregation in ferromagnetic semiconductor (Zn,Cr)Te

The Cr aggregation in a ferromagnetic semiconductor (Zn,Cr)Te was studied by performing precise analyses using TEM and XRD of microscopic structure of the Cr-aggregated regions formed in iodine-doped Zn{sub 1−x}Cr{sub x}Te films with a relatively high Cr composition x ∼ 0.2. It was found that the Cr-aggregated regions are composed of Cr{sub 1−δ}Te nanocrystals of the hexagonal structure and these hexagonal precipitates are stacked preferentially on the (111)A plane of the zinc-blende (ZB) structure of the host ZnTe crystal with its c-axis nearly parallel to the (111){sub ZB} plane.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan)
  2. International Center For Materials Nanoarchtectonics(MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22261848
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; AGGLOMERATION; CRYSTALS; DOPED MATERIALS; FILMS; IODINE; NANOSTRUCTURES; PRECIPITATION; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ZINC SULFIDES; ZINC TELLURIDES