skip to main content

SciTech ConnectSciTech Connect

Title: Fractional quantum conductance in edge channels of silicon quantum wells

We present the findings for the fractional quantum conductance of holes that is caused by the edge channels in the silicon nanosandwich prepared within frameworks of the Hall geometry. This nanosandwich represents the ultra-narrow p-type silicon quantum well (Si-QW), 2 nm, confined by the δ-barriers heavily doped with boron on the n-type Si (100) surface. The edge channels in the Si-QW plane are revealed by measuring the longitudinal quantum conductance staircase, G{sub xx}, as a function of the voltage applied to the Hall contacts, V{sub xy}, to a maximum of 4e{sup 2}/h. In addition to the standard plateau, 2e{sup 2}/h, the variations of the V{sub xy} voltage appear to exhibit the fractional form of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractions.
Authors:
; ; ;  [1]
  1. Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)
Publication Date:
OSTI Identifier:
22261840
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON; DOPED MATERIALS; ELECTRIC POTENTIAL; QUANTUM WELLS; SILICON