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Title: Morphological evolution of seeded self-limiting quantum dots on patterned substrates

We present experimental data and a comprehensive theoretical model for the self-limiting growth during metalorganic vaporphase epitaxy of Al{sub x}Ga{sub 1−x}As within tetrahedral recesses etched in GaAs(111)B substrates. A self-limiting profile develops during growth, accompanied by Ga segregation, and leads to the formation of quantum dots and vertical quantum wires along the base and central axis of the recesses, respectively. A theoretical model based on reaction-diffusion equations for the precursor kinetics, adatom diffusion and incorporation, on each crystallographic facet composing the template, is formulated: our theory explains, and reproduces with good agreement, all the experimental trends of the self-limiting profile and alloy segregation dependence on material composition and growth temperature. These results represent a promising route toward a reproducible on-demand design of seeded lowdimensional nanostructures grown on any patterned surface.
Authors:
;  [1] ;  [2]
  1. Tyndall National Institute, University College Cork, Dyke Parade, Cork (Ireland)
  2. The Blackett Laboratory, Imperial College London, London SW7 2AZ (United Kingdom)
Publication Date:
OSTI Identifier:
22261838
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; ALLOYS; CRYSTALLOGRAPHY; DIFFUSION EQUATIONS; EPITAXY; EXPERIMENTAL DATA; GALLIUM ARSENIDES; QUANTUM DOTS; QUANTUM WIRES; SEGREGATION; SUBSTRATES; X-RAY SPECTROSCOPY