skip to main content

SciTech ConnectSciTech Connect

Title: Ferromagnetic (Ga,Mn)As nanostructures for spintronic applications

Magneto-resistive, cross-like nanostructures have been designed and fabricated by electron-beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As. The nanostructures, composed of two perpendicular nanostripes crossing in the middle of their length, represent four-terminal devices, in which an electric current can be driven through any of the two nanostripes. In these devices, a novel magneto-resistive memory effect, related to a rearrangement of magnetic domain walls in the central part of the device, has been demonstrated. It consists in that the zero-field resistance of a nanostripe depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.
Authors:
; ; ; ;  [1] ;  [2]
  1. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)
  2. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland and MAX-Lab, Lund University, 22100 Lund (Sweden)
Publication Date:
OSTI Identifier:
22261834
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CURRENTS; ELECTRON BEAMS; EPITAXY; MAGNETIC FIELDS; MAGNETORESISTANCE; NANOSTRUCTURES