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Title: Spin injection and filtering in halfmetal/semiconductor (CrAs/GaAs) heterostructures

Theoretical investigations of spin-dependent transport in GaAS/CrAs/GaAs halfmetal-semiconductor heterostructures indicate that this system is a candidate for an efficient room temperature spin injector and filter. The spin dependent electronic structure of zincblende CrAs and the band offset between GaAs and CrAs are determined by ab-initio calculations within the method of linear muffin tin orbitals (LMTO). This band structure is mapped onto an effective sp{sup 3}d{sup 5}s* nearest neighbor tight-binding (TB) Hamiltonian and the steady-state transport characteristic is calculated within a non-equilibrium Green’s function approach. Even at room temperature we find current spin polarizations up to 97%.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. Institute of Physics, Karl-Franzens Universität Graz (Austria)
  2. Institute of Physics, Universität Augsburg (Germany)
  3. Institute of Theoretical and Computational Physics, TU Graz (Austria)
Publication Date:
OSTI Identifier:
22261832
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; HAMILTONIANS; MUFFIN-TIN POTENTIAL; SEMICONDUCTOR MATERIALS; SPIN; SPIN ORIENTATION; ZINC SULFIDES