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Title: Low-temperature scanning tunneling microscopy and transport measurements on adsorbate-induced two-dimensional electron systems

We have performed not only magnetotransport measurements on two-dimensional electron systems (2DESs) formed at the cleaved surfaces of p-InAs but also observations of the surface morphology of the adsorbate atoms, which induced the 2DES at the surfaces of narrow band-gap semiconductors, with use of a scanning tunneling microscopy. The electron density of the 2DESs is compared to the atomic density of the isolated Ag adatoms on InAs surfaces.
Authors:
; ;  [1]
  1. Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)
Publication Date:
OSTI Identifier:
22261826
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; ELECTRON DENSITY; ELECTRONS; INDIUM ARSENIDES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS