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Title: Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas

A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al{sub 0.3}Ga{sub 0.7}As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. Institut für Festkörperphysik, Leibniz Universität Hannover, D-30167 Hannover (Germany)
  2. Institut für Nanotechnologie, Karlsruher Institut of Technology, D-76021 Karlsruhe (Germany)
  3. Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93053 Regensburg (Germany)
  4. ETH Zürich (Switzerland)
Publication Date:
OSTI Identifier:
22261825
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRON GAS; GALLIUM ARSENIDES; INTERACTIONS; MAGNETORESISTANCE; QUANTUM WELLS