skip to main content

Title: Topological excitations in semiconductor heterostructures

Topological defects play an important role in the melting phenomena in two-dimensions. In this work, we report experimental observation of topological defect induced melting in two-dimensional electron systems (2DES) in the presence of strong Coulomb interaction and disorder. The phenomenon is characterised by measurement of conductivity which goes to zero in a Berezinskii-Kosterlitz-Thouless like transition. Further evidence is provided via low-frequency conductivity noise measurements.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4] ; ;  [5]
  1. Department of Physics, Indian Institute of Science, Bangalore 560012 (India)
  2. Cavendish laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, UK and Department of Physics, Stanford University, Stanford, CA 94305 (United States)
  3. Department of Physics, Indian Institute of Science, Bangalore 560012, India and Cavendish laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
  4. Cavendish laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, UK and Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom)
  5. Cavendish laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
Publication Date:
OSTI Identifier:
22261813
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EXCITATION; INTERACTIONS; MELTING; SEMICONDUCTOR MATERIALS