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Title: Energy relaxation of hot electrons in lattice-matched AlInN/AlN/GaN heterostructures

Using the dielectric continuum model, hot-electron power dissipation and energy relaxation times are calculated for a typical lattice-matched AlInN/AlN/GaN heterostructure, including effects of hot phonons and screening from the mobile electrons. The calculated power dissipation and energy relaxation times are very close to the experimental data.
Authors:
;  [1] ;  [2]
  1. Department of Physics, University of Hull, Hull, HU6 7RX (United Kingdom)
  2. School of Computing Science and Electronic Engineering, University of Essex, Colchester, CO4 3SQ (United Kingdom)
Publication Date:
OSTI Identifier:
22261812
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; DIELECTRIC MATERIALS; GALLIUM NITRIDES; PHONONS; RELAXATION