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Title: Phonon lasing in transport through double quantum dots

An optical phonon laser is proposed using a double quantum dot (DQD) fabricated on semiconductor substrates. The DQD couples to two modes of LO phonons which work as a natural cavity. The pumping is realized by the electric current under a finite bias. We show that lasing takes place when the tunneling rate to external leads is much larger than the decay rate of phonons.
Authors:
;  [1] ;  [2]
  1. Faculty of Science and Technology, Keio University, Yokohama 223-8522 (Japan)
  2. Institut für Theoretische Physik, Technische Universität Berlin, D-10623 Berlin (Germany)
Publication Date:
OSTI Identifier:
22261810
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRIC CURRENTS; LANTHANUM SELENIDES; PHONONS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SUBSTRATES; TUNNEL EFFECT