Phonon lasing in transport through double quantum dots

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848384· OSTI ID:22261810

Okuyama, Rin; Eto, Mikio ^[1]; Brandes, Tobias ^[2]

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1. Faculty of Science and Technology, Keio University, Yokohama 223-8522 (Japan)
2. Institut für Theoretische Physik, Technische Universität Berlin, D-10623 Berlin (Germany)

An optical phonon laser is proposed using a double quantum dot (DQD) fabricated on semiconductor substrates. The DQD couples to two modes of LO phonons which work as a natural cavity. The pumping is realized by the electric current under a finite bias. We show that lasing takes place when the tunneling rate to external leads is much larger than the decay rate of phonons.

• OSTI ID: 22261810
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRIC CURRENTS
LANTHANUM SELENIDES
PHONONS
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TUNNEL EFFECT