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Title: Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.
Authors:
; ;  [1] ; ; ;  [2] ;  [3] ;  [4]
  1. Department of Physics, Indian Institute of Science, Bangalore 560 012 (India)
  2. Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
  3. Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)
  4. Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)
Publication Date:
OSTI Identifier:
22261808
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; MAGNETIC FIELDS; MAGNETIC MATERIALS; MAGNETORESISTANCE; TEMPERATURE RANGE