Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848372· OSTI ID:22261798

Mani, R. G.; Ramanayaka, A. N. ^[1]; Wegscheider, W. ^[2]

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1. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)
2. Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich (Switzerland)

We examine the linear polarization sensitivity of the radiation- induced magneto-resistance oscillations by investigating the effect of rotating in-situ the electric field of linearly polarized microwaves relative to the current, in the GaAs/AlGaAs system. We find that the frequency and the phase of the photo-excited magneto-resistance oscillations are insensitive to the polarization. On the other hand, the amplitude of the resistance oscillations are strongly sensitive to the relative orientation between the microwave antenna and the current-axis in the specimen.

• OSTI ID: 22261798
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ELECTRIC FIELDS
GALLIUM ARSENIDES
MAGNETORESISTANCE
MICROWAVE RADIATION
OSCILLATIONS
POLARIZATION
SENSITIVITY