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Title: Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations

We examine the linear polarization sensitivity of the radiation- induced magneto-resistance oscillations by investigating the effect of rotating in-situ the electric field of linearly polarized microwaves relative to the current, in the GaAs/AlGaAs system. We find that the frequency and the phase of the photo-excited magneto-resistance oscillations are insensitive to the polarization. On the other hand, the amplitude of the resistance oscillations are strongly sensitive to the relative orientation between the microwave antenna and the current-axis in the specimen.
Authors:
;  [1] ;  [2]
  1. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)
  2. Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich (Switzerland)
Publication Date:
OSTI Identifier:
22261798
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ELECTRIC FIELDS; GALLIUM ARSENIDES; MAGNETORESISTANCE; MICROWAVE RADIATION; OSCILLATIONS; POLARIZATION; SENSITIVITY