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Title: Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ω{sub c}, and the microwave angular frequency, ω, satisfy 2ω ≤ ω{sub c} ≤ 3.5ω The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photo-excitation, in good agreement with theoretical predictions.
Authors:
;  [1] ;  [2]
  1. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)
  2. Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich (Switzerland)
Publication Date:
OSTI Identifier:
22261797
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; AMPLITUDES; CYCLOTRON FREQUENCY; ELECTRON TEMPERATURE; GALLIUM ARSENIDES; HEATING; MICROWAVE RADIATION; MOBILITY; OSCILLATIONS