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Title: Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks

By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here enlighten the role played by congestion in the network.
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [4] ; ;  [5] ;  [6]
  1. Institut Néel, CNRS and Université Joseph Fourier, BP 166, F-38042 Grenoble (France)
  2. IMEP-LAHC, Grenoble INP, Minatec, BP 257, F-38016 Grenoble, France and Departamento de Fısica, Universidad de Santiago de Chile, Santiago 9170124 (Chile)
  3. Université Catholique de Louvain, IMCN/NAPS, Louvain-la-Neuve (Belgium)
  4. Institut Néel, CNRS and Université Joseph Fourier, BP 166, F-38042 Grenoble, France and Université Catholique de Louvain, IMCN/NAPS, Louvain-la-Neuve (Belgium)
  5. IEMN, UMR CNRS 8520, UST Lille, BP 60069, F-59652 Villeneuve d'Ascq (France)
  6. IMEP-LAHC, Grenoble INP, Minatec, BP 257, F-38016 Grenoble (France)
Publication Date:
OSTI Identifier:
22261795
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRONS; MICROSCOPY; SEMICONDUCTOR MATERIALS; SIMULATION