Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848369· OSTI ID:22261795

Huant, S.; Liu, P.; Sellier, H. ^[1]; Baltazar, S. ^[2]; Hackens, B.; Martins, F. ^[3]; Bayot, V. ^[4]; Wallart, X.; Desplanque, L. ^[5]; Pala, M. G. ^[6]

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1. Institut Néel, CNRS and Université Joseph Fourier, BP 166, F-38042 Grenoble (France)
2. IMEP-LAHC, Grenoble INP, Minatec, BP 257, F-38016 Grenoble, France and Departamento de Fısica, Universidad de Santiago de Chile, Santiago 9170124 (Chile)
3. Université Catholique de Louvain, IMCN/NAPS, Louvain-la-Neuve (Belgium)
4. Institut Néel, CNRS and Université Joseph Fourier, BP 166, F-38042 Grenoble, France and Université Catholique de Louvain, IMCN/NAPS, Louvain-la-Neuve (Belgium)
5. IEMN, UMR CNRS 8520, UST Lille, BP 60069, F-59652 Villeneuve d'Ascq (France)
6. IMEP-LAHC, Grenoble INP, Minatec, BP 257, F-38016 Grenoble (France)

By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here enlighten the role played by congestion in the network.

• OSTI ID: 22261795
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRONS
MICROSCOPY
SEMICONDUCTOR MATERIALS
SIMULATION