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Title: Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models

The addition of dilute concentrations of bismuth (Bi) into GaAs to form GaBi{sub x}As{sub 1−x} alloys results in a large reduction of the band gap energy (E{sub g}) accompanied by a significant increase of the spin-orbit-splitting energy (Δ{sub SO}), leading to an E{sub g} < Δ{sub SO} regime for x ∼ 10% which is technologically relevant for the design of highly efficient photonic devices. The quaternary alloy GaBi{sub x}N{sub y}As{sub 1−x−y} offers further flexibility for band gap tuning, because both nitrogen and bismuth can independently induce band gap reduction. This work reports sp{sup 3}s* tight binding and 14-band k⋅p models for the study of the electronic structure of GaBi{sub x}As{sub 1−x} and GaBi{sub x}N{sub y}As{sub 1−x−y} alloys. Our results are in good agreement with the available experimental data.
Authors:
 [1] ; ;  [2]
  1. Tyndall National Institute, Lee Maltings, Dyke Parade, Cork (Ireland)
  2. Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland and Department of Physics, University College Cork, Cork (Ireland)
Publication Date:
OSTI Identifier:
22261791
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ALLOYS; BISMUTH; ELECTRONIC STRUCTURE; FLEXIBILITY; GALLIUM ARSENIDES; QUATERNARY ALLOY SYSTEMS