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Title: Evidence of impurity assisted tunneling in SiGe/Si heterostructures

The investigation of vertical transport in delta-doped SiGe/Si heterostructures has been presented. The asymmetrical triple barrier structure was grown by MBE technique. The delta layer of boron impurity was placed into the center of narrower quantum well. The growth procedure was followed by conventional processing including photolithography and plasma etching and magnetron sputtering. SIMS and X-rays diagnostics have been used to control the desired structure. The conductance of the structure has been measured at liquid helium temperature and analyzed. All pronounced resonances have been identified. The resonant feature near 60 mV has to be attributed to impurity-assisted tunneling that is supported by calculation of binding energy of the acceptor in the narrower quantum well.
Authors:
; ; ; ; ; ; ;  [1] ;  [2]
  1. Institute for Physics of Microstructures RAS, 603950, Nizhny Novgorod, GSP-105 (Russian Federation)
  2. Nizhny Novgorod State University, 603950, Nizhny Novgorod, Gagarina avenue, 23 (Russian Federation)
Publication Date:
OSTI Identifier:
22261782
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; BINDING ENERGY; CONTROL; DOPED MATERIALS; GERMANIUM SILICIDES; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PLASMA; QUANTUM WELLS; TUNNEL EFFECT; X RADIATION