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Title: Depletion of parallel conducting layers in high mobility In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As modulation doped field effect transistors

Self-consistent calculations for solving the Poisson and Schrödinger equations were performed in order to study parallel conduction in the In{sub 0.52}Al{sub 0.48}As barrier layer in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As Modulation Doped Field Effect Transistors. It is shown that the parallel conducting layer occupied sub-bands can be entirely depleted by wet chemical etching of the upper part of the un-doped In{sub 0.52}Al{sub 0.48}As Schottky layer without affecting the total carrier concentration at the In{sub 0.53}Ga{sub 0.47}As quantum well.
Authors:
; ; ; ;  [1] ;  [2] ;  [3]
  1. Department of Material, Engineering, University of Ioannina, Ioannina 45110 (Greece)
  2. School of Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom)
  3. School of Physics and Astronomy, Kelvin Building, University of Glasgow, Glasgow G12 8QQ (United Kingdom)
Publication Date:
OSTI Identifier:
22261781
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; DOPED MATERIALS; FIELD EFFECT TRANSISTORS; QUANTUM WELLS